Semiconductor input protective device against external surge vol

Details Semiconductor input protective device against external surge vol Semiconductor input protective device against external surge vol

1992-10-15

1994-09-20

Ngo, Ngan Van

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257360, 257362, 257378, 257393, 361101, H01L 2906, H01L 2978, H01L 2702

Patent

active

053492277

ABSTRACT:
A semiconductor input protective device has an NPN type blpolar transistor and an N-channel MOS transistor. In the NPN type bipolar transistor, the collector is connected to a signal line and the emitter and the base are commonly connected to a ground line. In the N-channel MOS transistor, either the drain or the source is connected to the signal line and the other of either the drain or the source is connected to the signal line and the gate is connected to either the signal line or the power source line. The N-channel MOS transistor has a threshold voltage higher than the power source voltage. The NPN type bipolar transistor and the N-channel MOS transistor having a thick gate insulation film are used as input protection elements so that, even when a high voltage interface is effected, the function of the protective MOS transistor is not interfered with.

REFERENCES:
patent: 4692781 (1987-08-01), Rountree et al.
patent: 4903093 (1990-02-01), Ide et al.

Affiliated with

Also associated with

Rating

Semiconductor input protective device against external surge vol does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor input protective device against external surge vol, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor input protective device against external surge vol will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2430155