Semiconductor ingot machining method

Details Semiconductor ingot machining method Semiconductor ingot machining method

1993-11-30

1996-01-16

Kisliuk, Bruce M.

Abrading

Abrading process

Glass or stone abrading

451 67, 451 69, 451 57, 451 54, 125 1302, B24B 100, B24B 700

Patent

active

054843260

ABSTRACT:
The cutting process is executed after the grinding process and for one semiconductor ingot, one grinding device and one inner diameter saw slicing machine are used to perform grinding process and cutting process respectively. During the grinding process, the entirety of the cylindrical body portion of the semiconductor ingot is cylindrically ground, a portion of the tail end is cylindrically ground, the orientation flat position is determined and an orientation flat is formed by surface grinding. During the cutting process the tail portion is cut off and a sample for lifetime measurement is taken and a wafer sample is cut off from the end of the cylindrical body portion on the tail side. The semiconductor ingot is reversed in the direction of the axis and the head portion of the semiconductor ingot is cut off and a wafer sample is cut off from the cylindrical body portion on the head side. Wafer samples are cut off from the end of the cylindrical body portion on the head side and from the middle portion of cylindrical body portion to divide the cylindrical body portion into two blocks.

REFERENCES:
patent: 4084354 (1978-04-01), Grandia et al.
patent: 4756796 (1988-07-01), Saitou
patent: 4773951 (1988-09-01), Moffatt et al.
patent: 4894956 (1990-01-01), Honda et al.
patent: 4896459 (1990-01-01), Brandt
patent: 5111622 (1992-05-01), Steere, Jr.
patent: 5185956 (1993-02-01), Steere, Jr.
patent: 5329733 (1994-07-01), Steere, Jr.

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