Semiconductor image sensor

Details Semiconductor image sensor Semiconductor image sensor

1997-11-14

2000-02-08

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257290, 257293, H01L 31062, H01L 31113

Patent

active

060230819

ABSTRACT:
An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

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patent: 4868623 (1989-09-01), Nishiura
patent: 5216491 (1993-06-01), Yamamoto et al.
patent: 5625210 (1997-04-01), Lee et al.
S.M. SZC Physics of Semiconductor Devices ISBN 0-471-05661-8 TK781.85.5988 1981 A Wiley-Interscience Publication pp. 754,759,760 .
Microelectronic Devices Edward S. Young p. 63 McGraw-Hill Book Co. 1988.
Physis of Semiconductor Devices Second Edition S.M. SZC p. 66 John Wiley & Son, Inc. 1981.
Device Electronics for Integrated Circuit Second Edition Richard S. Muller p. 94 John Wiley & Son, Inc. 1986.
B. C. Burkey et al., "The Pinned Photodiode for an Interline-Transfer CCD Image Sensor", IEDM-84, 1984, Section 2.3, pp. 28-31.

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