Semiconductor heterostructure laser

Details Semiconductor heterostructure laser Semiconductor heterostructure laser

1993-12-17

1995-04-11

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 22, 359326, 359328, H01S 319

Patent

active

054065755

ABSTRACT:
The semiconductor heterostructure laser includes a semiconductor substrate, a multilayered light emitting region and an active nonlinear waveguide. The multilayered light emitting region serves as a light source for producing fundamental light of a fundamental frequency. The active nonlinear waveguide comprises a number of multilayered heterostructures which absorb the fundamental light and double the frequency of the fundamental light, resulting in a doubled frequency light. The multilayered heterostructure also has a resonator structure. For effective operation, a first refractive mirror is formed between the semiconductor substrate and the multilayered light emitting region, and a second refractive mirror is formed between the multilayered light emitting region and the active nonlinear waveguide.

REFERENCES:
patent: 4866489 (1989-09-01), Yokogawa et al.
patent: 5185752 (1993-02-01), Welch et al.

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