Semiconductor heterostructure having a capping layer preventing

Active solid-state devices (e.g. – transistors – solid-state diode – Including semiconductor material other than silicon or... – Group iii-v compound

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257200, 257 22, 257190, H01L 2920

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053028473

ABSTRACT:
A III-V semiconductor heterojunction in which a capping layer (14) is formed between the two layers (10, 16) of the heterojunction to prevent any deleterious effects due to As-P exchange. When InAlAs is grown on InP, the capping layer is AlP. When GaAs is grown on GaInP, the capping layer is GaP.

REFERENCES:
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patent: 4987096 (1991-01-01), Ishikawa et al.
patent: 4987097 (1991-01-01), Nitta et al.
M. Razeghi et al., "Extremely high electron mobility in a GaAs-Ga.sub.x In.sub.1-x P heterostructure grown by metalorganic chemical vapor deposition," Applied Physics Letters, 1989, vol. 5, pp. 457-459.
R. Bhat et al., "A novel technique for the preservation of gratings in InP and InGaAsP and for the simultaneous preservation of InP, InGaAs, and InGaAsP in OMCVD," Journal of Crystal Growth, 1991, vol. 107, pp. 871-877.
M. J. S. P. Brasil et al., "Arsenic-Phosphorous Exchange During the Formation of InAlAs/InP Interfaces", InP Conference, Apr. 23-24, 1992.

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