Semiconductor heterojunction devices based on SiC

Details Semiconductor heterojunction devices based on SiC Semiconductor heterojunction devices based on SiC

2010-02-26

2010-12-21

Fahmy, Wael M (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having schottky gate

C438S167000, C438S191000, C438S604000, C438S606000, C257SE21403, C257SE21407

Reexamination Certificate

active

07855108

ABSTRACT:
A Si(1-x)MxC material for heterostructures on SiC can be grown by CVD, PVD and MOCVD. SIC doped with a metal such as Al modifies the bandgap and hence the heterostructure. Growth of SiC Si(1-x)MxC heterojunctions using SiC and metal sources permits the fabrication of improved HFMTs (high frequency mobility transistors), HBTs (heterojunction bipolar transistors), and HEMTs (high electron mobility transistors).

REFERENCES:
patent: 2004/0256613 (2004-12-01), Oda et al.

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