Semiconductor having structure with openings

Details Semiconductor having structure with openings Semiconductor having structure with openings

2006-03-31

2008-11-25

Lebentritt, Michael S. (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S700000, C438S704000, C257SE21219, C257SE21251

Reexamination Certificate

active

07456086

ABSTRACT:
A process for producing an insulation structure with openings of a low aspect ratio is disclosed. In one embodiment, a dopant is introduced into the insulation structure with a concentration which on average increases or decreases in the vertical direction from a pre-processed semiconductor surface, the openings are formed in a dry-etching step and the aspect ratio of the openings is reduced by increasing the basic surface area of the openings using a subsequent wet-chemical etching step.

REFERENCES:
patent: 6355567 (2002-03-01), Halle et al.
patent: 6740584 (2004-05-01), Eimori
patent: 2002/0056913 (2002-05-01), Eimori
patent: 442964 (2001-06-01), None

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