Semiconductor growth method with thickness control

Details Semiconductor growth method with thickness control Semiconductor growth method with thickness control

1996-06-14

1998-05-26

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438495, 438606, H01L 21203

Patent

active

057563756

ABSTRACT:
Molecular beam epitaxy (202) with growing layer thickness and doping control (206) by feedback of sensor signals such as spectrosceopic ellipsometer signals based on a process model. Examples include III-V compound structures with multiple AlAs, InGaAs, and InAs layers as used in resonant tunneling diodes and hetrojunction bipolar transistors with doped and undoped GaAs layers, AlGaAs and InGaAs.

REFERENCES:
patent: 5096533 (1992-03-01), Igarashi
patent: 5104823 (1992-04-01), Mand
patent: 5171399 (1992-12-01), Brennan et al.
patent: 5244829 (1993-09-01), Kim
patent: 5322808 (1994-06-01), Brown et al.

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