Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2009-02-16
2010-02-09
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257SE21641
Reexamination Certificate
active
07659598
ABSTRACT:
A ground shield is disclosed that includes a ‘cheesed’ metal positioned within a dielectric layer and a metal region positioned within a first metal level over the cheesed metal. The ground shield can have different forms depending on the metal used, and provisions are made to prevent diffusion of copper (Cu) when that is used as the metal in the cheese metal of the ground shield. The ground shield provides a low resistance, very thick metal at a first metal (M1) level for passive RF elements in conjunction with the standard back-end-of-line (BEOL) integration. The invention also includes a method of forming the ground shield.
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IBM Global Services China Ltd, “Information Disclosures Statement,” Jun. 13, 2008, 1 page.
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Erturk Mete
Joseph Alvin J.
Stamper Anthony K.
Hoffman Warnick LLC
International Business Machines - Corporation
Kebede Brook
Kotulak Richard
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