Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Reexamination Certificate
2006-08-01
2006-08-01
Gabor, Otilia (Department: 2884)
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
C250S493100
Reexamination Certificate
active
07084405
ABSTRACT:
A high-speed, high-resolution, broadband dynamic infrared scene generator based on semiconductor transducer conversion of visible spectrum scene images into infrared spectrum images. Wavelength conversion is accomplished in the semiconductor material through absorption of visible spectrum energy by valence electrons in a subsurface layer of the semiconductor material and photogeneration by valence band to conduction band electron transfer occurring within about one diffusion length of the semiconductor material surface. The semiconductor material used, for example Germanium or Silicon provides a band gap energy value that is smaller than the quantum energy level of the optical emission. Temperature of the semiconductor material may be maintained at a selected level above or below that of the infrared scene. Infrared images of higher frequency content than are achievable with conventional thermal heating infrared converters are accomplished. The invention thus includes down conversion of visible generated light in order to develop a semiconductor pixel-less Dynamic Infrared Scene Projector capable of simulating high-speed broadband IR scenery.
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Bogatyrenko Vyacheslav V.
Kircher James R.
Malyutenko Oleg Y.
Malyutenko Volodymyr K.
Murrer, Jr. Robert L.
AFMCLO/JAZ
Gabor Otilia
Hollins Gerald B.
The United States of America as represented by the Secretary of
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