Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to nonconductive state
Reexamination Certificate
2006-11-10
2008-10-21
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to nonconductive state
C438S022000, C438S131000, C438S135000, C438S601000, C438S618000, C257SE21656
Reexamination Certificate
active
07439102
ABSTRACT:
A semiconductor fuse box includes a fuse structure and a protective structure disposed between the fuse structure and an integrated circuit structure. The protective structure has at least one irregular side surface. The protective structure (which may also include a pad formed there-under) extends beyond a bottom of the fuse structure. Such an irregular side surface and such an extension of the protective structure minimize propagation of damaging energy to the adjacent integrated circuit structure when a laser beam is directed to the fuse structure.
REFERENCES:
patent: 6303970 (2001-10-01), Lee et al.
patent: 2002/0005551 (2002-01-01), Ema et al.
patent: 2004/0140501 (2004-07-01), Kim
Kang Min-Sung
Oh Kyung-Seok
Park Joo-Sung
Shin Jung-Hyun
Choi Monica H.
Lee Kyoung
Lindsay Jr. Walter L.
Samsung Electronics Co,. Ltd.
LandOfFree
Semiconductor fuse box and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor fuse box and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor fuse box and method for fabricating the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4008035