Semiconductor furnace for reducing particulates in a quartz tube

Details Semiconductor furnace for reducing particulates in a quartz tube Semiconductor furnace for reducing particulates in a quartz tube

1996-08-15

1998-05-05

Bennett, Henry A.

Heating

Work feeding, agitating, discharging or conveying...

Removable furnace bottom section or kiln cart

432 5, 432253, F27D 312

Patent

active

057465916

ABSTRACT:
The present invention is an improved semiconductor furnace system that reduces particles in the quartz tube and wafer boat. The cooling rate of conventional furnaces is too rapid in currently used processes. The thermal process includes high stress from polymorphic transformation, which causes the peeling of a polysilicon film and microcracking of the quartz tube and wafer boat. The present invention includes a bottom plate, a furnace tube, a wafer boat, a cooling water means, a thermocouple, a first heating element, and a second heating element. The second heating element limits the heating or cooling rates of the furnace to the range of 0.1.degree.-2.degree. C./min to reduce the temperature gradient inside the furnace tube. Therefore, the thermal stress that is caused by the phase transition of the quartz is reduced by the invention and the particles and microcrack issues are also reduced by the invention.

REFERENCES:
patent: 5207573 (1993-05-01), Miyagi et al.
patent: 5329095 (1994-07-01), Okase
patent: 5360336 (1994-11-01), Monoe
patent: 5370371 (1994-12-01), Miyagi et al.
patent: 5616264 (1997-04-01), Nishi et al.
patent: 5632820 (1997-05-01), Taniyama et al.

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