Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2004-09-02
2009-08-11
Smoot, Stephen W (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S639000, C438S740000
Reexamination Certificate
active
07572727
ABSTRACT:
The present invention is a semiconductor contact formation system and method. Contact insulation regions are formed with multiple etch stop sublayers that facilitate formation of contacts. This contact formation process provides relatively small substrate connections while addressing critical lithographic printing limitation concerns in forming contact holes with small dimensions. In one embodiment, a multiple etch stop insulation layer comprising multiple etch stop layers is deposited. A contact region is formed in the multiple etch stop insulation layer by selectively removing (e.g., etching) some of the multiple etch stop insulation layer. In one embodiment, a larger portion of the multiple etch stop insulation layer is removed close to the metal layer and a smaller portion is removed closer to the substrate. The different contact region widths are achieved by performing multiple etching processes controlled by the multiple etch stop layers in the multiple etch stop insulation layer and spacer formation to shrink contact size at a bottom portion. Electrical conducting material (e.g., tungsten) is deposited in the contact region.
REFERENCES:
patent: 5912188 (1999-06-01), Gardner et al.
patent: 6078073 (2000-06-01), Habu et al.
patent: 6083822 (2000-07-01), Lee
patent: 6365504 (2002-04-01), Chien et al.
patent: 6441418 (2002-08-01), Shields et al.
patent: 2002/0008323 (2002-01-01), Watanabe et al.
patent: 2005/0003656 (2005-01-01), Chung
Ghandehari Kouros
Hopper Dawn
Hui Angela T.
Li Wenmei
Smoot Stephen W
Spansion LLC
LandOfFree
Semiconductor formation method that utilizes multiple etch... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor formation method that utilizes multiple etch..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor formation method that utilizes multiple etch... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4070494