Semiconductor floating gate memory cell

Details Semiconductor floating gate memory cell Semiconductor floating gate memory cell

1985-05-01

1986-04-01

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

Bad bit

365185, G11C 1140

Patent

active

045802475

ABSTRACT:
A semiconductor memory cell includes a source-drain series connection of several memory transistors each comprising electrically floating gates and being of the depletion type, with a selection transistor being disposed between a first bit line and a second bit line. The memory cell remains programmable as long as one of the series-arranged memory transistors has an injector oxide free from defects. The memory transistors having an injector oxide damaged by a breakdown are not programmable but do not affect the programmability of the respective semiconductor memory cell.

REFERENCES:
patent: 4514830 (1985-04-01), Hagiwara et al.

Affiliated with

Also associated with

Rating

Semiconductor floating gate memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor floating gate memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor floating gate memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1088613