Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2005-03-29
2005-03-29
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S077000, C257S043000
Reexamination Certificate
active
06872988
ABSTRACT:
A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.
REFERENCES:
patent: 5739086 (1998-04-01), Goyal et al.
patent: 5741377 (1998-04-01), Goyal et al.
patent: 5898020 (1999-04-01), Goyal et al.
patent: 5958599 (1999-09-01), Goyal et al.
patent: 5964966 (1999-10-01), Goyal et al.
patent: 5968877 (1999-10-01), Budai et al.
patent: 5972847 (1999-10-01), Feenstra et al.
patent: 6077344 (2000-06-01), Shoup et al.
patent: 6106615 (2000-08-01), Goyal et al.
patent: 6114287 (2000-09-01), Lee et al.
patent: 6150034 (2000-11-01), Paranthaman et al.
patent: 6156376 (2000-12-01), Paranthaman et al.
patent: 6159610 (2000-12-01), Paranthaman et al.
patent: 6180570 (2001-01-01), Goyal
patent: 6235402 (2001-05-01), Shoup et al.
patent: 6256521 (2001-07-01), Lee et al.
patent: 6261704 (2001-07-01), Paranthaman et al.
patent: 6270908 (2001-08-01), Williams et al.
patent: 6316391 (2001-11-01), Doi et al.
patent: 6331199 (2001-12-01), Goyal et al.
patent: 6375768 (2002-04-01), Goyal
patent: 6399154 (2002-06-01), Williams et al.
patent: 6440211 (2002-08-01), Beach et al.
patent: 6447714 (2002-09-01), Goyal et al.
patent: 6451450 (2002-09-01), Goyal et al.
patent: 6455166 (2002-09-01), Truchan
patent: 6468591 (2002-10-01), Paranthaman et al.
patent: 6486100 (2002-11-01), Lee et al.
patent: 6599346 (2003-07-01), Goyal et al.
patent: 6602313 (2003-08-01), Goyal et al.
patent: 6607838 (2003-08-01), Goyal et al.
patent: 6607839 (2003-08-01), Goyal et al.
patent: 6610413 (2003-08-01), Goyal et al.
patent: 6610414 (2003-08-01), Goyal et al.
patent: 6617283 (2003-09-01), Paranthaman et al.
patent: 6635097 (2003-10-01), Goyal et al.
patent: 6645313 (2003-11-01), Goyal et al.
patent: 6663976 (2003-12-01), Beach et al.
patent: 6670308 (2003-12-01), Goyal
patent: 20030143438 (2003-07-01), Norton et al.
U.S. Appl. No. 10/189,678, Goyal, filed Jul. 3, 2002.
M. Schreck, et al., “Diamond nucleation on iridium buffer layers and subsequent textured growth: A route for the realization of single-crystal diamond flims”, . . .Jan. 8, 2001, pp. 192-194, vol. 78, No. 2, Applied Physics Letters, Melville, NY.
Marasco Joseph A.
Nguyen Cuong
UT-Battelle LLC
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