Semiconductor films

Details Semiconductor films Semiconductor films

1994-08-22

1995-04-25

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Group iii-v compound

257613, H01L 29161

Patent

active

054101786

ABSTRACT:
Semiconductor films of the formula (InP).sub.1-x (TlP.sub.3).sub.x on InP substrates which cover the bandgap of 2-12 .mu.m for use with long wavelength infrared detector and laser applications are disclosed.

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Applied Physics Letters, Photoconductance measurements on InTlSb/InSb/GaAs grown by low-pressure metalorganic chemical vapor deposition, P. T. Staveteig, Y. H. Choi, G. Labeyrie, E. Bigan and M. Razeghi, American Institute of Physics, 24 Jan. 1994, vol. 64, No. 4, pp. 460-462.
InGaP/InGaAsP/GaAs 0.808 .mu.m Separate Confinement Laser Diodes Grown by Metalorganic Chemical Vapor Deposition, J. Diaz, I. Eliashevich, K. Mobarhan, E. Kolev, L. J. Wang, D. Z. Garbuzov and M. Razeghi, IEEE, 1994, pp. 132-134.
Journal of Applied Physics, Y. H. Choi, P. T. Staveteig, E. Bigan and M. Razeghi, American Institute of Physics, vol. 75, No. 6, 15 Mar. 1994, pp. 3196-3198.
High-power laser diodes based on InGaAsP alloys, M. Razeghi, Nature, vol. 369, 23 Jun. 1994, pp. 631-633.
Electron Transport Properties of Ga.sub.0.51 In.sub.0.49 P for Device Applications, C. Besikci and M. Razeghi, IEEE, 1994, pp. 1066-1069.
Efficiency of photoluminescence and excess carrier confinement in InGaAsP/GaAs structures prepared by metalorganic chemical-vapor deposition, J. Diaz, J. Yi, M. Erdtmann, X. He, E. Kolev, D. Garbuzov, E. Bigan and M. Raseghi, American Institute of Physics, 15 Jul. 1994, pp. 700-704.
Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells, W. C. Mitchel, G. J. Brown and Ikai Lo, American Institute of Physics, 19 Sep. 1994, pp. 1578-1580.
On the Description of the Collision Terms in Three-Valley Hydrodynamic Models for GaAs Device Modeling, C. Besikci and M. Razeghi, IEEE, vol. 41, No. 8, Aug. 1994, pp. 1471-1475.

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