Semiconductor film, semiconductor device and method for...

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2006-01-31

2006-01-31

Quach, T. N. (Department: 2826)

Semiconductor device manufacturing: process

Gettering of substrate

C438S482000, C438S486000

Reexamination Certificate

active

06991997

ABSTRACT:
Concerning an art related to a manufacturing method for a semiconductor device having an integrated circuit using thin film transistors on a substrate, a problem is to provide a condition for forming an amorphous silicon film having distortion. In the deposition of an amorphous silicon film using a sputter method, a condition is provided with a frequency of 15 to 25 kHz and a deposition power of 0.5 to 3 kW. This can sufficiently contain Ar at 10×1020/cm3or more in an amorphous silicon film, thus making possible to form an amorphous silicon film having distortion.

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