Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-05-23
2006-05-23
Haumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C438S162000, C438S486000, C438S473000
Reexamination Certificate
active
07049183
ABSTRACT:
A method of the present invention includes the steps of forming an amorphous semiconductor layer on an insulative surface, adding a catalyst element capable of promoting crystallization to the amorphous semiconductor layer and then performing a first heat treatment so as to crystallize the amorphous semiconductor layer, thereby obtaining a crystalline semiconductor layer, performing a first gettering process to remove the catalyst element from the semiconductor layer, and performing a second gettering process that is different from the first gettering process to remove the catalyst element from the semiconductor layer. The first gettering process includes removing at least large masses of a semiconductor compound of the catalyst element present in the crystalline semiconductor layer. The second gettering process includes moving at least a portion of the catalyst element remaining in the crystalline semiconductor layer so as to form a low-catalyst-concentration region in the crystalline semiconductor layer, the low-catalyst-concentration region having a lower catalyst element concentration than in other regions.
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Iwai Michinori
Makita Naoki
Morino Shinya
Tsutsumi Takayuki
Anya Igwe U.
Haumeister B. William
Keating & Bennett LLP
Sharp Kabushiki Kaisha
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