Semiconductor film manufacturing method and substrate...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

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07399693

ABSTRACT:
This invention provides a semiconductor film manufacturing method using a new separation technique and applications thereof. The semiconductor film manufacturing method of this invention includes a separation layer forming a step of hetero-epitaxially growing a separation layer (2) on a seed substrate (1), a semiconductor film forming step of forming a semiconductor film (3) on the separation layer (2), and a separation step of separating, by using the separation layer (2), the semiconductor film (3) from a composite member (Ia) formed in the semiconductor film forming step.

REFERENCES:
patent: 5371037 (1994-12-01), Yonehara
patent: 5712199 (1998-01-01), Nakagawa et al.
patent: 5750000 (1998-05-01), Yonehara et al.
patent: 5755914 (1998-05-01), Yonehara
patent: 5763288 (1998-06-01), Sakaguchi et al.
patent: 5840616 (1998-11-01), Sakaguchi et al.
patent: 5856229 (1999-01-01), Sakaguchi et al.
patent: 5868947 (1999-02-01), Sakaguchi et al.
patent: 5970361 (1999-10-01), Kumomi et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6100165 (2000-08-01), Sakaguchi et al.
patent: 6106613 (2000-08-01), Sato et al.
patent: 6140209 (2000-10-01), Iwane et al.
patent: 6143628 (2000-11-01), Sato et al.
patent: 6150031 (2000-11-01), Yonehara
patent: 6156624 (2000-12-01), Yamagata et al.
patent: 6190937 (2001-02-01), Nakagawa et al.
patent: 6211038 (2001-04-01), Nakagawa et al.
patent: 6258698 (2001-07-01), Iwasaki et al.
patent: 6294478 (2001-09-01), Sakaguchi et al.
patent: 6306729 (2001-10-01), Sakaguchi et al.
patent: 6331208 (2001-12-01), Nishida et al.
patent: 6342433 (2002-01-01), Ohmi et al.
patent: 6376332 (2002-04-01), Yanagita et al.
patent: 6382292 (2002-05-01), Ohmi et al.
patent: 6391743 (2002-05-01), Iwane et al.
patent: 6429095 (2002-08-01), Sakaguchi et al.
patent: 6452091 (2002-09-01), Nakagawa et al.
patent: 6468923 (2002-10-01), Yonehara et al.
patent: 6475323 (2002-11-01), Ohmi et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6566235 (2003-05-01), Nishida et al.
patent: 6613678 (2003-09-01), Sakaguchi et al.
patent: 6639327 (2003-10-01), Momoi et al.
patent: 6677183 (2004-01-01), Sakaguchi et al.
patent: 6746559 (2004-06-01), Ohmi et al.
patent: 6756289 (2004-06-01), Nakagawa et al.
patent: 6867110 (2005-03-01), Yanagita et al.
patent: 6891578 (2005-05-01), Yonehara et al.
patent: 6972215 (2005-12-01), Sakaguchi et al.
patent: 7015507 (2006-03-01), Yonehara et al.
patent: 7029950 (2006-04-01), Yonehara et al.
patent: 7351300 (2008-04-01), Takayama et al.
patent: 2005/0124137 (2005-06-01), Yonehara
patent: 2005/0148122 (2005-07-01), Yonehara
patent: 2005/0217565 (2005-10-01), Lahreche et al.
patent: 2006/0019466 (2006-01-01), Nayfeh et al.
patent: 2006/0124961 (2006-06-01), Sakaguchi et al.
patent: 2006/0166468 (2006-07-01), Yonehara et al.
patent: 2001-192300 (2001-07-01), None
patent: 2002-280531 (2002-09-01), None
patent: 2003-78117 (2003-03-01), None
patent: 3518455 (2004-02-01), None
patent: 2004-119807 (2004-04-01), None
patent: 558743 (2003-10-01), None
patent: I284360 (2007-07-01), None
O. Ambacher, et al., “Laser-Induced Liftoff and Laser Patterning of Large Free-Standing GaN Substrates”, Materials Research Society Symposium Proceedings, vol. 617, 2000, pp. J1.7.1-J1.7.12.
Daisuke Morita, et al., “High Output Power 365 nm Ultraviolet Light Emitting Diode of GaN-Free Structure”, Japanese Journal of Applied Physics, vol. 41, Pt. 2, No. 12B, 2002, pp. L1434-L1436.
W. S. Wong, et al., “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off”, Applied Physics Letters, vol. 75, No. 10, Sep. 6, 1999, pp. 1360-1362.
Taiwanese Official Action dated Mar. 25, 2008 in Taiwanese Patent Application No. 094120284.0.
Hong Xiao, Introduction to Semiconductor Manufacturing Technology, Prentice Hall Inc., 2001, p. 603.

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