Semiconductor field effect device having oxygen enriched polycry

Details Semiconductor field effect device having oxygen enriched polycry Semiconductor field effect device having oxygen enriched polycry

1975-06-16

1977-03-15

Lynch, Michael J.

357 23, 357 42, 357 54, 357 59, H01L 2934

Patent

active

040127621

ABSTRACT:
A Metal Insulator Semiconductor (MIS) field effect device has an oxygen-doped polycrystalline silicon layer on the field portion in order to prevent an unwanted parasitic inversion layer. The oxygen-doped polycrystalline silicon layer contains oxygen in the range of 2 to 40 atomic percent.

REFERENCES:
patent: 3576478 (1971-04-01), Watkins
patent: 3649884 (1972-03-01), Haneta
patent: 3710204 (1973-01-01), Batz
patent: 3841926 (1974-10-01), Garnache et al.
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 3977019 (1976-08-01), Matsushita et al.
H. Lin et al., "Shielded Silicon Gate Comp. MOS Integ. Ckt.," IEEE Trans. on Elec. Dev., vol. ED-19, No. 11, Nov. 1972, pp. 1199-1207.

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