Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2007-06-05
2007-06-05
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
Reexamination Certificate
active
10525045
ABSTRACT:
The MFIS transistors heretofore have a problem that after data writing, the data disappear in terms of memory transistor operation in about one day at most. This is mainly because the buffer layer and the ferroelectric have a high leakage current and, hence, charge is accumulated around the interface between the ferroelectric and the buffer layer so as to shield the electric polarization memorized by the ferroelectric, making it impossible for the electric polarization of the ferroelectric to control electrical conduction between the source and the drain in the transistor. In the present invention, by constituting an insulator buffer layer2of HfO2+uor Hf1−xAl2xO2+x+y, the leakage current flowing through each of the insulator buffer layer2and a ferroelectric3can be reduced and a memory transistor having a truly sufficient long data holding time is realized.
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Harrison Monica D.
Jr. Carl Whitehead
Morgan & Lewis & Bockius, LLP
National Institute of Advanced Industrial Science and Technology
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