Semiconductor fabrication method suitable for MEMS

Details Semiconductor fabrication method suitable for MEMS Semiconductor fabrication method suitable for MEMS

2007-05-30

2011-12-27

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S021000, C438S694000, C257SE21230, C257SE21496

Reexamination Certificate

active

08084361

ABSTRACT:
A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The corrosion resistant film is deposited, so that a first portion of the corrosion resistant film is above the sacrificial material in the first region, and a second portion of the corrosion resistant film is above the second region. The first portion of the corrosion resistant film is removed by chemical mechanical polishing. The sacrificial material is removed from the first region using an etching process that selectively etches the sacrificial material, but not the corrosion resistant film.

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