Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-06-16
2000-04-11
Niebling, John F.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438629, 438637, 438946, 438949, H01L 214763
Patent
active
060487852
ABSTRACT:
Each region of multiple regions on a semiconductor substrate is imaged in an exposure field defined by a reticle. The regions are separated and electrically isolated within the semiconductor substrate by an isolation such as a field oxide or trench isolation. The regions are interconnected by imaging using a stitching reticle having an exposure field overlapping a plurality of the regions. The combination of reticle-imaged fields effectively increases the size of a field formed using a step and repeat technique while achieving high imaging resolution within the combined regions. Similarly, a plurality of integrated chip sets, including microprocessor, memory, and support chips, are constructed on a single semiconductor wafer using separate reticle imaging of each of the plurality of integrated chip sets. The different circuits are interconnected using a stitch mask and etch operation that combines the regions.
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Dawson Robert
Fulford Jr. H. Jim
Gardner Mark I.
Hause Frederick N.
Michael Mark W.
Advanced Micro Devices , Inc.
Hack Jonathan
Koestner Ken J.
Niebling John F.
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