Semiconductor fabrication method for making small features

Details Semiconductor fabrication method for making small features Semiconductor fabrication method for making small features

2005-02-22

2005-02-22

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S947000, C438S976000, C438S978000

Reexamination Certificate

active

06858542

ABSTRACT:
A semiconductor fabrication method that includes forming a film (109) comprising an imaging layer (112) and an under layer (110) over a semiconductor substrate (102). The imaging layer (112) is patterned to produce a printed feature (116) having a printed dimension (124). The under layer (110) is then processed to produce a sloped sidewall void (120) in the under layer (110) wherein the void (120) has a finished dimension (126) in proximity to the underlying substrate that is less than the printed dimension. Processing the under layer (110) may include exposing the wafer to high density low pressure N2plasma.

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