Data processing: measuring – calibrating – or testing – Measurement system – Performance or efficiency evaluation
Reexamination Certificate
2006-07-04
2006-07-04
Assouad, Patrick J. (Department: 2857)
Data processing: measuring, calibrating, or testing
Measurement system
Performance or efficiency evaluation
C438S005000, C700S121000
Reexamination Certificate
active
07072798
ABSTRACT:
A resonant frequency sensor is disposed in a plasma-processing chamber included in a semiconductor fabricating apparatus. A change in the resonant frequency caused by etching, sputtering or deposition is sensed in order to detect the timing of performing the maintenance of the processing chamber. If data representing the relationship between an amount of etching or deposition occurring at a predetermined position in the processing chamber and occurrence of an abnormality is produced in advance, an optimal maintenance timing can be determined.
REFERENCES:
patent: 5056355 (1991-10-01), Hepher et al.
patent: 5910700 (1999-06-01), Crotzer
patent: 5948983 (1999-09-01), Gogol et al.
patent: 6510727 (2003-01-01), Reiter et al.
patent: 6701202 (2004-03-01), Nakano et al.
patent: 6714833 (2004-03-01), Nakano et al.
patent: 6795796 (2004-09-01), Nakano et al.
patent: 6830650 (2004-12-01), Roche et al.
patent: 6866744 (2005-03-01), Miya et al.
patent: 6899766 (2005-05-01), Miya et al.
patent: 2003/0205326 (2003-11-01), Miya et al.
patent: 2004/0007326 (2004-01-01), Roche et al.
patent: 2004/0159401 (2004-08-01), Miya et al.
patent: 2005/0011611 (2005-01-01), Mahoney et al.
patent: 2005/0039852 (2005-02-01), Roche et al.
patent: 2005/0049499 (2005-03-01), Kaplan
patent: 61092020 (1986-05-01), None
patent: 09171992 (1997-06-01), None
patent: 2001-59808 (2001-03-01), None
patent: 2001196889 (2001-07-01), None
patent: 2002200599 (2002-07-01), None
patent: 2002-261001 (2002-09-01), None
Japanese Office Action issued in corresponding application No. 2003-031111.
Assouad Patrick J.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Tokyo Electron Limited
LandOfFree
Semiconductor fabricating apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor fabricating apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor fabricating apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3561397