Semiconductor etching process which produces oriented sloped wal

Details Semiconductor etching process which produces oriented sloped wal Semiconductor etching process which produces oriented sloped wal

1987-05-11

1988-10-18

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

156643, 156646, 156647, C23C 1404, C23C 1416

Patent

active

047785837

ABSTRACT:
A method is disclosed of forming a semiconductor device including performing a dry plasma etch at one major surface of a monocrystalline silicon substrate to form a sloped lateral wall lying in a selected crystallographic plane intersecting one major surface. The oriented sloped lateral wall is formed during plasma etching by introducing into contact with said major surface at unprotected locations a chlorofluorocarbon gas and employing during etching a pressure of at least 6.67 Pa and a radio frequency power density of less than 3 watts per square centimeter.

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Kinoshita et al., "Anisotropic Etching of Silicon by Gas Plasma", Japan J. Appl. Phys., vol. 16, 1977, No. 2, pp. 381 and 382.

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