Semiconductor ESD device and methods of protecting a...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S209000, C257SE23002, C257SE23134, C257SE23150, C257SE27070, C438S128000, C438S132000

Reexamination Certificate

active

07608910

ABSTRACT:
A semiconductor device and methods for protecting a semiconductor device. In an example, the semiconductor device may include a semiconductor substrate including at least one electrostatic discharge (ESD) protection device, at least one metal interconnection line connected to the at least one ESD protection device through a conductive plug and a passivation layer disposed on less than all of the metal interconnection line. In an example method, a semiconductor device may be protected by diverting at least a portion of an electron build-up from an accumulation point to one or more protective circuits along one or more conductive paths, the electron build-up, without the diverting, sufficient to cause an ESD at the accumulation point. In another example, a semiconductor device may be protected by exposing one or more conductive lines to a fuse opening to avoid an ESD by diverting an electron build-up at the fuse opening to one or more ESD protection devices.

REFERENCES:
patent: 5223444 (1993-06-01), Mosser et al.
patent: 6943302 (2005-09-01), Kageyama et al.
patent: 2002/0079552 (2002-06-01), Koike
patent: 2005/0161766 (2005-07-01), Sato et al.
patent: 2006/0214260 (2006-09-01), Cho et al.
patent: 07-078872 (1995-03-01), None
patent: 11-163287 (1999-06-01), None
patent: 2002-184869 (2002-06-01), None
patent: 10-2003-0073378 (2003-09-01), None

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