Semiconductor EPI on recycled silicon wafers

Details Semiconductor EPI on recycled silicon wafers Semiconductor EPI on recycled silicon wafers

1991-05-21

1992-07-21

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156636, 156645, 156656, 156657, 156662, H01L 21306, B44C 122, C03C 1500, C23F 100

Patent

active

051319799

ABSTRACT:
Disclosed is a method for transforming a rejected semiconductor product wafer, originally having epitaxial silicon on a low resistivity substrate, into a recycled EPI-on-silicon wafer targeted for reuse as a lower cost higher quality material suitable for new semiconductor product fabrication. The method comprises the steps of removing the old semiconductor product layers, rounding the edges of the wafer if necessary, polishing the wafer surface, thermally treating the wafer to drive lattice imperfections from the surface to create fresh inpurity getter sites in the wafer body, and introducing a new epitaxial silicon layer. The low cost feature is provided by the reuse of the original substrate wafer. The high quality feature is provided by the targeted redistribution of oxygen induced defects from the recycled substrate wafer surface.

REFERENCES:
patent: 3600241 (1971-08-01), Doo et al.
patent: 3923567 (1975-12-01), Lawrence

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