Active solid-state devices (e.g. – transistors – solid-state diode – Encapsulated – With specified encapsulant
Reexamination Certificate
2005-05-27
2008-10-07
Feely, Michael J (Department: 1796)
Active solid-state devices (e.g., transistors, solid-state diode
Encapsulated
With specified encapsulant
C257S793000, C257S795000, C257SE23121, C428S413000, C428S416000, C428S418000, C438S127000, C523S457000, C523S458000
Reexamination Certificate
active
07432603
ABSTRACT:
In an epoxy resin composition comprising (A) an epoxy resin, (B) a curing agent, (C) an inorganic compound, and (D) an inorganic filler, the inorganic compound (C) is an oxide of metal elements at least one of which is a metal element of Group II in the Periodic Table having a second ionization potential of up to 20 eV, typically Zn2SiO4, ZnCrO4, ZnFeO4or ZnMoO4. When used for semiconductor encapsulation, the epoxy resin composition is highly reliable and cures into a product which is effective for minimizing electrical failure such as defective insulation due to a copper migration phenomenon.
REFERENCES:
patent: 2002/0197468 (2002-12-01), Sinko
patent: 2003/0197159 (2003-10-01), Kinose et al.
patent: 11-92545 (1999-04-01), None
Asano Eiichi
Shiobara Toshio
Birch & Stewart Kolasch & Birch, LLP
Feely Michael J
Shin-Etsu Chemical Co. , Ltd.
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