Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1980-02-29
1981-05-12
Smith, John D.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
148 15, 427 85, 427 86, 427 87, H01L 21265, H01L 21324
Patent
active
042670144
ABSTRACT:
A method for protecting an ion-implanted substrate during the annealing process by covering the ion-implanted layer with a suitable encapsulant. A thin layer of ions are implanted into a GaAs substrate. A protective layer of germanium, amorphous GaAs, doped GaAs, or GaAlAs is applied over the implanted layer and on the periphery of the ion-implanted GaAs substrate. The composite is annealed at a temperature which is adequate for the lattice to recover from the ion-implantation-induced damage. The protective layer is removed subsequent to the anneal step, without any damage to the ion-implanted layer.
REFERENCES:
patent: 4033788 (1977-07-01), Hunsperger
patent: 4058413 (1977-11-01), Welch
Donnelly et al., "Silicon . . . GaAs . . . annealed . . . ," Applied Phys Letters, 27, No. 1, p. 44-43, Jul. 1975.
Kasahara et al., "Capless anneal of ion-implanted GaAs . . . ," J. Appl. Phys. 50 (1), Jan. 1979, pp. 541-543.
Vaidyanathan et al., "Study of Encapsulants for Annealing GaAs", J. Electrochem. Soc.:Solid State Science and Technology, 124, Noll, pp. 1781-1784, Nov. 1977.
Lidow et al., "Multilayered Encapsulation of GaAs", J. Appl. Phys. 49 (10), pp. 5213-5217, Oct. 1978.
Anderson et al., "Smooth and Continuous Ohmic Contacts to GaAs using Epitaxial Ge Films", J. Appl. Phys. 49 (5), p. 2998, May 1978.
Christou et al., "Epitaxial Growth of AlKaAlAs Films on (100) GaAs by Hot Vacuum Deposition", J. Appl. Phys. 50 (2), p. 1139, Feb. 1979.
Christou Aristos
Davey John E.
Dietrich Harry B.
Crane Melvin L.
Ellis William T.
Sciascia R. S.
Smith John D.
The United States of America as represented by the Secretary of
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