Semiconductor element structure with stepped portion for formati

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

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430311, G03C 516

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active

059392401

ABSTRACT:
The semiconductor device disclosed has semiconductor patterns as elements constituting a semiconductor device on a semiconductor substrate. The semiconductor patterns are formed respectively on a first region and a second region on the semiconductor substrate. Between the first region and the second region, there is a stepped portion which is set such that a value S of the step is S=m.lambda./2n wherein .lambda. is a wavelength of the photosensitive illuminating light used in a photolithography process for patterning a photoresist film, m is a positive integer, and n is a refractive index of the photoresist film. The provision of the stepped portion enables the formation of semiconductor element patterns of fine sizes with controllability thereof.

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