Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2008-07-08
2008-07-08
Lebentritt, Michael S. (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C257SE23006
Reexamination Certificate
active
07396735
ABSTRACT:
A semiconductor element heat dissipating member is provided which has excellent heat dissipation characteristics and adhesion characteristics and enables production of a semiconductor device at a low cost. A semiconductor device using the same, and a method of producing the same are also provided. The semiconductor element heat dissipating member has a conductive substrate and an electrically insulating amorphous carbon film containing hydrogen, and the electrically insulating amorphous carbon film is formed at least on a region of the conductive substrate on which region a semiconductor element is to be mounted.
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Hasegawa Hideo
Ishiko Masayasu
Miyachi Yukio
Mori Hiroyuki
Nakanishi Kazuyuki
Kabushiki Kaisha Toyota Chuo Kenkyusyo
Lebentritt Michael S.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Stevenson Andre′
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