Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-07-13
1996-09-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257325, 257402, 257405, 257406, 257410, 257411, H01L 29792
Patent
active
055593518
ABSTRACT:
A semiconductor element including a silicon substrate, a silicon oxide film formed on the silicon substrate, and a top electrode formed on the silicon oxide film, wherein chromium is included only in a region of the silicon oxide film, the region including the interface between the silicon oxide film and the top electrode and the vicinity of the interface, and the method of manufacturing the same.
REFERENCES:
patent: 3999209 (1976-12-01), Wrigley et al.
patent: 4837610 (1989-06-01), Hiratsuka et al.
Aronwitz, et al., "Modification of Interfacial Charge Between SiO.sub.2 and Silicon", Appl. Phys. Lett., 52(11), 14 Mar. 1988, pp. 913-915.
Krusin-Elbaum, et al., "Shifts in the Flatband Voltage of Metal-Oxide-Silicon Structure Due to Iodine in SiO.sub.2 ", Appl. Phys. Lett., 48(2), pp. 177-179.
Krusin-Elbaum et al., "Dependence of the Flatband Voltage of Si-MOS on Distribution of Cesium in SiO.sub.2 ", Electrochemical Soc., vol. 133, No. 8, Aug. 1986, pp. 1712-1715.
Takiyama, et al., "Electrical Characteristics of MOS Diode Contaminated with Cr-1", Japan Society of Applied Physics, 430a-SY-14, 1981, p. 707.
Takiyama et al., "Thermal Process Dependence of Chromium Donor/Acceptor in Silicon", Material Science Forum, vol. 117-118, 1993, pp. 261-266.
Nakanishi, et al., "Reliability of Metal-Implanted SiO.sub.2," Japan Society of Applied Physics, 28a-V-7, 1991, p. 592.
Mintel William
Nippon Steel Corporation
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