Semiconductor element and wafer level chip size package...

Details Semiconductor element and wafer level chip size package... Semiconductor element and wafer level chip size package...

2005-03-10

2010-11-09

Le, Thao X (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S774000, C257SE23020, C438S118000, C438S622000

Reexamination Certificate

active

07830011

ABSTRACT:
A semiconductor device, encapsulated in a wafer level chip size package (WLCSP), includes a plurality of pad electrodes formed on the surface of a semiconductor chip, wherein a first insulating layer is formed on the surface of the semiconductor chip except the pad electrodes; a plurality of connection electrodes and at least one heat-dissipation electrode are formed on the surface of the first insulating layer; the pad electrodes and the connection electrodes are mutually connected via a first wiring portion; the heat-dissipation electrode is connected with a second wiring portion; and a second insulating layer is formed to enclose the electrodes and wiring portions, wherein the second wiring portion is arranged in proximity to a heating portion of the semiconductor chip and is formed on the surface of the first insulating layer except the prescribed region corresponding to the first wiring portion.

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