Semiconductor element and semiconductor memory device using the

Details Semiconductor element and semiconductor memory device using the Semiconductor element and semiconductor memory device using the

1994-08-16

1997-02-04

Ng o, Ng an V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 66, 257 67, 257386, 257390, H01L 2976, H01L 31036

Patent

active

056001630

ABSTRACT:
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

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T. Yamanaka et al., "A 5.9 .mu.m.sup.2 Super Low Power SRAM Cell Using a New Phase Shift Lithography", IEEE 1990.
Electronics Letters, K. Nakazato et al., "Single-Electron Memory", Feb. 18, 1993, vol. 29, No. 4, pp. 384-385.
P. Fang, et al., "Characterizing a Single Hot-Electron-Induced Trap in Submicron MOSFET Using Random Telegraph Noise", 1990 Symposium on VLSI Technology, pp. 37-38.
J. Chang, "Nonvolatile Semiconductor Memory Devices", Proceedings of IEEE, vol. 64, No. 7, Jul. 1976.
J. Scott-Thomas, et al., "Conductance Oscillations Periodic in the Density of a One-Dimensional Electronic Gas", The American Physical Society 1989.

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