Semiconductor element and semiconductor memory device using...

Details Semiconductor element and semiconductor memory device using... Semiconductor element and semiconductor memory device using...

2007-12-18

2007-12-18

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S390000, C257SE29129, C257SE29300

Reexamination Certificate

active

11439152

ABSTRACT:
A field-effect semiconductor element implemented with a fewer number of elements and a reduced area and capable of storing data by itself without need for cooling at a cryogenic temperature, and a memory device employing the same. Gate-channel capacitance is set so small that whether or not a trap captures one electron or hole can definitely and distinctively be detected in terms of changes of a current of the semiconductor FET element. By detecting a change in a threshold voltage of the semiconductor element brought about by trapping of electron or hole in the trap, data storage can be realized at a room temperature.

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