Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2006-11-07
2010-02-02
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S197000, C438S106000, C438S123000, C257SE21320, C257SE21229, C257SE21499
Reexamination Certificate
active
07655527
ABSTRACT:
Shown are embodiments where a process of manufacturing a semiconductor element on a semiconductor wafer is shown. The semiconductor element is obtained by dividing the function-providing semiconductor wafer into functional elements. The function-providing semiconductor wafer is, at its first main surface, mechanically coupled to a handling wafer. The thinning is carried out in the coupled state of the function-providing semiconductor wafer, and the function-providing semiconductor wafer is divided in its state coupled to the handling wafer. During or after connecting the semiconductor element to a lead frame the mechanical coupling between the semiconductor element and the corresponding part of the handling wafer is destroyed. Other embodiments are also shown.
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Infineon Technologies Austria AG
Nhu David
Schwegman Lundberg & Woessner, P.A.
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