Semiconductor element and process for production for the same

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438174, 438572, 438513, H01L 21265

Patent

active

056270909

ABSTRACT:
There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.

REFERENCES:
patent: 4742026 (1988-05-01), Vatus et al.
patent: 4849368 (1989-07-01), Yamashita et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 4981809 (1991-01-01), Mitsuaki et al.
patent: 5006478 (1991-04-01), Kobayashi et al.
patent: 5032541 (1991-07-01), Sakamoto et al.
patent: 5087322 (1992-02-01), Lillienfeld et al.
patent: 5112763 (1992-05-01), Taylor et al.
patent: 5270228 (1993-12-01), Ishikawa

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor element and process for production for the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor element and process for production for the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor element and process for production for the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2132164

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.