Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1995-05-31
1997-05-06
Picardat, Kevin M.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438174, 438572, 438513, H01L 21265
Patent
active
056270909
ABSTRACT:
There is provided a semiconductor element having a Schottky electrode which forms a Schottky junction with an active layer formed on a compound semiconductor substrate characterized in that a modified layer is formed in at least a portion of a region of the active layer on which region the Schottky electrode is formed and a vicinity of that region.
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Marukawa Takashi
Nakano Hiroyuki
Murata Manufacturing Co. Ltd.
Picardat Kevin M.
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