Semiconductor element and method for fabricating the same

Details Semiconductor element and method for fabricating the same Semiconductor element and method for fabricating the same

2007-02-13

2007-02-13

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

C438S314000, C438S317000, C438S318000

Reexamination Certificate

active

11062851

ABSTRACT:
A heterojunction bipolar transistor comprises a collector layer, a base layer formed on the collector layer and an emitter layer formed on the base layer. The emitter layer includes a first semiconductor layer covering the entire top surface of the base layer and a second semiconductor layer formed on a predetermined part of the first semiconductor layer. An inactivated region is formed, by ion implantation, in a region of the collector layer located below the base layer except for a part thereof corresponding to the second semiconductor layer. The edge of the inactivated region is located away from the edge of the second semiconductor layer, and a region of the first semiconductor layer between the edge of the inactivated region and the edge of the second semiconductor layer is depleted.

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patent: 6-232148 (1994-08-01), None

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