Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Patent
1996-07-01
1998-10-13
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
H01L 2131
Patent
active
058211730
ABSTRACT:
A semiconductor element including a silicon substrate, a silicon oxide film formed on the silicon substrate, and a top electrode formed on the silicon oxide film, wherein chromium is included only in a region of the silicon oxide film, the region including the interface between the silicon oxide film and the top electrode and the vicinity of the interface, and the method of manufacturing the same.
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Berry Renee R.
Bowers Jr. Charles L.
Nippon Steel Corporation
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