Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Reexamination Certificate
2006-06-27
2006-06-27
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
C257S080000, C257S199000, C257S077000, C257S096000, C257S194000, C257S097000, C438S022000
Reexamination Certificate
active
07067847
ABSTRACT:
On a substrate made of e.g., sapphire single crystal is formed an Al underlayer having FWHM X-ray rocking curve value of 90 seconds or below. A buffer layer is formed on the AlN underlayer and has a composition of AlpGaqIn1−p−qN (0≦p≦1, 0≦y≦q). A GaN-based semiconductor layer group is formed on the buffer layer.
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Asai Keiichiro
Nakamura Yukinori
Shibata Tomohiko
Tanaka Mitsuhiro
Burr & Brown
Im Junghwha
Lee Eddie
NGK Isulators, Ltd.
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