Semiconductor electronic device

Details Semiconductor electronic device Semiconductor electronic device

2009-02-03

2011-11-29

Picardat, Kevin M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S012000, C257S013000, C257S014000, C257S094000, C257S096000, C257S103000, C257S191000, C257S192000, C257S192000, C257S194000, C438S046000, C438S047000, C438S172000

Reexamination Certificate

active

08067787

ABSTRACT:
A semiconductor electronic device comprises a substrate; a buffer layer formed on the substrate, the buffer layer including not less than two layers of composite layer in which a first semiconductor layer formed of a nitride-based compound semiconductor layer having a lattice constant smaller than a lattice constant of the substrate and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate and a second semiconductor layer formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate are alternately laminated; an intermediate layer provided between the substrate and the buffer layer, the intermediate layer being formed of a nitride-based compound semiconductor having a lattice constant smaller than a lattice constant of the first semiconductor layer and a thermal expansion coefficient larger than a thermal expansion coefficient of the substrate; and a semiconductor active layer formed on the buffer layer, the semiconductor active layer being formed of a nitride-based compound semiconductor, wherein: thicknesses of the first semiconductor layers in the buffer layer are non-uniform thereamong, and at least one of the first semiconductor layer has a thickness greater than a critical thickness, the critical thickness being a thickness above which a direction of warp caused by the first semiconductor layer to the substrate is inverted.

REFERENCES:
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patent: 7518154 (2009-04-01), Otsuka et al.
patent: 7569870 (2009-08-01), Yanagihara et al.
patent: 7745850 (2010-06-01), Otsuka et al.
patent: 2005/0118752 (2005-06-01), Otsuka et al.
patent: 2006/0054926 (2006-03-01), Lahreche
patent: 2003-059948 (2003-02-01), None
patent: 2007-088426 (2004-04-01), None

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