Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-06
2010-02-16
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S750000, C257SE31126, C438S085000, C438S104000, C136S256000
Reexamination Certificate
active
07663236
ABSTRACT:
Disclosed herein is a semiconductor electrode with improved power conversion efficiency through inhibition of recombination reactions of electrons. The semiconductor electrode comprises a transparent electrode consisting of a substrate and a conductive material coated on the substrate, and a metal oxide layer formed on the transparent electrode wherein the metal oxide layer contains a phosphate.Further disclosed is a solar cell employing the semiconductor electrode.
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Lee Eun Sung
Nam Jung Gyu
Park Ju Chul
Park Sang Cheol
Park Young Jun
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Wilczewski M.
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