Semiconductor dynamic random access memory with relaxed pitch co

Details Semiconductor dynamic random access memory with relaxed pitch co Semiconductor dynamic random access memory with relaxed pitch co

1988-12-09

1990-12-25

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Noise suppression

365208, 365149, G11C 1134

Patent

active

049808648

ABSTRACT:
A semiconductor dynamic random access memory is provided comprising bit line pairs divided into groups and sense amplifiers, one for each bit line pair group provided on one side of the bit line pairs in a line. When a word line is selected, only one bit line pair is released from a precharge.equalize state to be connected to a corresponding sense amplifier in each bit line pair group in accordance with address information of the word line. Memory cells are arranged such that only one memory cell is connected to the selected word line in each bit line pair group.

REFERENCES:
patent: 4367540 (1983-01-01), Shimohigashi
patent: 4581720 (1986-04-01), Takemae et al.
patent: 4625298 (1986-11-01), Sumi
patent: 4872142 (1989-10-01), Hannai

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