Semiconductor dynamic random access memory cell free from leakag

Details Semiconductor dynamic random access memory cell free from leakag Semiconductor dynamic random access memory cell free from leakag

1994-09-07

1995-08-01

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

365149, 257 57, G11C 1300

Patent

active

054385415

ABSTRACT:
A storage capacitor incorporate in a semiconductor dynamic random access memory cell has an accumulating electrode of p-type polysilicon electricaly conencted to an n-type drain region of an associated switching transistor, a dielectric film structure covering the accumulating electrode and a counter electrode opposed through the dielectric film structure and formed of a p-type polysilicon, and the dielectric film structure is thinner than a critical thickness for a direct tunneling current by virtue of the wide potential barrier between the dielectric film structure and the p-type polysilicon and the Fermi level of the p-type polysilicon falling into the forbidden band of the other p-type polyslicon.

REFERENCES:
patent: 5278428 (1994-01-01), Yamada et al.

Affiliated with

Also associated with

Rating

Semiconductor dynamic random access memory cell free from leakag does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor dynamic random access memory cell free from leakag, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor dynamic random access memory cell free from leakag will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-738107