Semiconductor dynamic quantity sensor

Details Semiconductor dynamic quantity sensor Semiconductor dynamic quantity sensor

2005-05-26

2009-11-24

Gebremariam, Samuel A (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Physical deformation

Reexamination Certificate

active

07622781

ABSTRACT:
When movable electrodes of beam arrangement structures are displaced in a direction perpendicular to the surface of a support substrate in first and second capacitance constituent portions by action of an acceleration while carrier voltages are applied, the difference between a first capacitance and second capacitance is output from the support substrate through a third capacitance constituent portion. Under self-diagnosis, the voltage applying counter electrode portion of the self-diagnosis fixed capacitance constituent portion is set to a first potential, and a signal output counter electrode portion of the third capacitance constituent portion is set to a second potential different from the first potential, whereby the potential of the support substrate corresponding to the fixed electrode in the first and second capacitance constituent portions is forcedly changed.

REFERENCES:
patent: 5623099 (1997-04-01), Schuster et al.
patent: 6257061 (2001-07-01), Nonoyama et al.
patent: 6601431 (2003-08-01), Nagahara et al.
patent: 7059190 (2006-06-01), Sakai et al.
patent: A-05-018990 (1993-01-01), None
patent: A-07-174652 (1995-07-01), None
patent: A-09-005354 (1997-01-01), None
patent: A-9-113534 (1997-05-01), None
patent: A-2001-091263 (2001-04-01), None

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