Semiconductor dynamic memory device with decoded active loads

Static information storage and retrieval – Read/write circuit – Differential sensing

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Details

365203, 365210, G11C 702

Patent

active

046566139

ABSTRACT:
A semiconductor dynamic memory device contains differential sense amplifiers for detecting the charge on bit lines, and active pull-up circuits for restoring bit lines to a full 1 level. The pull-up circuits are not activated on the dummy cell sides, however, because the power used to restore the dummy cell would be wasted since the dummy cell capacitors are always discharged. The device illustrated uses folded bit lines and multiplexed sense amplifiers; one of two opposite pairs of bit lines is selected. The two opposite pairs share precharge and active pull-up circuits on one side of the array, and share column output lines on the opposite side. The multiplex circuitry selects one side or the other for sensing, and also couples precharge and boost voltages or read/write data back and forth from one side of the sense amplifier to the other.

REFERENCES:
patent: 4233675 (1980-11-01), Karp et al.
patent: 4366559 (1982-12-01), Misaizu et al.
patent: 4370575 (1983-01-01), McAlexander, III

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