Semiconductor DRAM cell having a capacitor

Details Semiconductor DRAM cell having a capacitor Semiconductor DRAM cell having a capacitor

1996-01-23

1998-03-17

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257303, 257306, 257308, H01L 27108

Patent

active

057290342

ABSTRACT:
A DRAM cell and a process for formation of a capacitor of a DRAM cell. The present invention provides a lower plate electrode consisting of a first conductive layer formed upon a first inter-layer insulating layer, the first inter-layer insulating layer covering the cell region except a contact hole portion; a capacitor dielectric layer formed on the surface of the lower plate electrode; a capacitor lower node electrode consisting of a second conductive layer formed on the dielectric layer and contacting with the source of a pass transistor; a bit line layer disposed upon a second insulating layer and connected to the drain region of the pass transistor through the second inter-layer insulating layer (disposed upon the lower node electrode); a capacitor upper node electrode consisting of a third conductive layer and connected to the capacitor lower node electrode after passing through the second inter-layer insulating layer and through a fourth insulating layer (disposed upon the bit line layer); a capacitor dielectric layer formed upon the capacitor upper node electrode; and a capacitor upper plate electrode consisting of a fourth conductive layer formed on the dielectric layer.

REFERENCES:
patent: 5177574 (1993-01-01), Park

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