Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-04-25
2009-08-11
Garber, Charles D. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S519000, C438S527000, C257SE21057, C257SE21147, C257SE21248
Reexamination Certificate
active
07572716
ABSTRACT:
A method is disclosed for doping a target area of a semiconductor substrate, such as a source or drain region of a transistor, with an electronically active dopant (such as an N-type dopant used to create active areas in NMOS devices, or a P-type dopant used to create active areas in PMOS devices) having a well-controlled placement profile and strong activation. The method comprises placing a carbon-containing diffusion suppressant in the target area at approximately 50% of the concentration of the dopant, and activating the dopant by an approximately 1,040 degree Celsius thermal anneal. In many cases, a thermal anneal at such a high temperature induces excessive diffusion of the dopant out of the target area, but this relative concentration of carbon produces a heretofore unexpected reduction in dopant diffusion during such a high-temperature thermal anneal. The disclosure also pertains to semiconductor components produced in this manner, and various embodiments and improvements of such methods for producing such components.
REFERENCES:
patent: 2004/0235280 (2004-11-01), Keys et al.
patent: 2006/0160338 (2006-07-01), Graoui et al.
Bu Haowen
Chakravarthi Srinivasan
Ekbote Shashank S.
Obradovic Borna
Abdelaziez Yasser A
Brady III Wade J.
Garber Charles D.
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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