Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000, C257S059000, C257S066000, C257S068000, C257S071000, C257S297000, C257S298000, C257S299000, C257S300000, C257S310000, C257S311000, C257S312000, C257S313000, C257S359000
Reexamination Certificate
active
06911688
ABSTRACT:
A semiconductor display device with an interlayer insulating film in which surface levelness is ensured with a limited film formation time, heat treatment for removing moisture does not take long, and moisture in the interlayer insulating film is prevented from escaping into a film or electrode adjacent to the interlayer insulating film. A TFT is formed and then a nitrogen-containing inorganic insulating film that transmits less moisture compared to organic resin film is formed so as to cover the TFT. Next, organic resin including photosensitive acrylic resin is applied and an opening is formed by partially exposing the organic resin film to light. The organic resin film where the opening is formed, is then covered with a nitrogen-containing inorganic insulating film which transmits less moisture than organic resin film does. Thereafter, the gate insulating film and the two layers of the nitrogen-containing inorganic insulating films are partially etched away in the opening of the organic resin film to expose the active layer of the TFT.
REFERENCES:
patent: 5459596 (1995-10-01), Ueda et al.
patent: 5585949 (1996-12-01), Yamazaki et al.
patent: 5706064 (1998-01-01), Fukunaga et al.
patent: 5781254 (1998-07-01), Kim et al.
patent: 5956105 (1999-09-01), Yamazaki et al.
patent: 5982460 (1999-11-01), Zhang et al.
patent: 6136624 (2000-10-01), Kemmochi et al.
patent: 6252297 (2001-06-01), Kemmochi et al.
patent: 6271543 (2001-08-01), Ohtani et al.
patent: 6492659 (2002-12-01), Yamazaki et al.
patent: 6515300 (2003-02-01), den Boer et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 2001/0005606 (2001-06-01), Tanaka et al.
patent: 2001/0009283 (2001-07-01), Arao et al.
patent: 2001/0030322 (2001-10-01), Yamazaki et al.
patent: 2002/0036462 (2002-03-01), Hirano
patent: 2002/0155706 (2002-10-01), Mitsuki et al.
patent: 2003/0189207 (2003-10-01), Murakami et al.
patent: 2003/0189210 (2003-10-01), Yamazaki et al.
patent: 2003/0193054 (2003-10-01), Hayakawa et al.
patent: 1128430 (2001-08-01), None
patent: 1-156725 (1989-06-01), None
patent: 2-234134 (1990-09-01), None
patent: 10-039334 (1998-02-01), None
patent: 10-307305 (1998-11-01), None
patent: 2001-313397 (2001-11-01), None
patent: 2001-356711 (2002-03-01), None
Fujikawa Saishi
Hayakawa Masahiko
Hirosue Takashi
Kato Kiyoshi
Murakami Satoshi
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
Soward Ida M.
Zarabian Amir
LandOfFree
Semiconductor display device and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor display device and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor display device and manufacturing method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3515123